Scattering anisotropy in HgTe (013) quantum well
نویسندگان
چکیده
We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well 22 nm width directions [100] and [031¯] as density function n. The is absent at minimal near charge neutrality point. increases with increase n reaches about 10% when Fermi level within first subband H1. There sharp (up to 60%) second E2. conclude that effect due small intra-subband anisotropic interface roughness scattering, one strongly inter-subband but microscopical reason for such strong change remains unknown.
منابع مشابه
Circular photogalvanic effect in HgTe/CdHgTe quantum well structures
B. Wittmann, S.N. Danilov, V.V. Bel’kov, S.A. Tarasenko, E.G. Novik, H. Buhmann, C. Brüne, L.W. Molenkamp, Z.D. Kvon, N.N. Mikhailov, S.A. Dvoretsky, N.Q.Vinh, A.F.G. van der Meer, B. Murdin, and S.D. Ganichev Terahertz Center, University of Regensburg, 93040 Regensburg, Germany A.F. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia 3 Physical ...
متن کاملReorientation of anisotropy in a square well quantum hall sample.
We have measured magnetotransport at half-filled high Landau levels in a quantum well with two occupied electric subbands. We find resistivities that are isotropic in perpendicular magnetic field but become strongly anisotropic at nu = 9/2 and 11/2 on tilting the field. The anisotropy appears at an in-plane field, B(ip) approximately 2.5 T, with the easy-current direction parallel to B(ip) but ...
متن کاملDesign principles and coupling mechanisms in the 2D quantum well topological insulator HgTe/CdTe.
We present atomistic band structure calculations revealing a different mechanism than recently surmised via k · p calculations about the evolution of the topological state (TS) in HgTe/CdTe. We show that 2D interface (not 1D edge) TSs are possible. We find that the transitions from a topological insulator at critical HgTe thickness of n = 23 ML (6.453 [corrected] Å) to a normal insulator at sm...
متن کاملTHz Photoresponse and Magnetotransport of detectors made of HgCdTe/HgTe quantum well structures
In addition to spaceand time-resolved measurements of the electrical generation of excited electrons in quantum Hall (QH) devices the dissipation in these devices induced by Terahertz (THz) laser impulses is investigated. For these tasks a THz laser system ( p-Ge-Laser [1]) is applied. This laser uses transitions between Landau levels of light holes and emits laser impulses with an adjustable d...
متن کاملQuantum spin hall insulator state in HgTe quantum wells.
Recent theory predicted that the quantum spin Hall effect, a fundamentally new quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We fabricated such sample structures with low density and high mobility in which we could tune, through an external gate voltage, the carrier conduction from n-type to p-type, passing through an insul...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2022
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0101932